Solutions for integrated circuit integration of alternative active area materials
US7626246B2 · kind B2 · utility
103Cited by
136References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 26, 2006 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Oct 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
Methods of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby. Such areas of alternative material are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.