Phase-change random access memory and programming method
US7626859B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2007 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Jan 4, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programming method for a phase-change random access memory (PRAM) may be provided. The programming method may include determining an amorphous state of a chalcogenide material using programming pulses to form programming areas having threshold voltages corresponding to logic high and logic low, and/or controlling a trailing edge of programming pulses during programming to control a quenching speed of the chalcogenide material so as to adjust a threshold voltage of the chalcogenide material. Accordingly, programming pulses corresponding to logic low or logic high may have uniform magnitudes regardless of a corresponding logic level. Accordingly, reliability of a PRAM device may be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.