Method for passivating crystal silicon surfaces
US7629236B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2004 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Nov 30, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
In a method of making a c-Si-based cell or a μc-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH3/H2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH3/H2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.