In situ silicon and titanium nitride deposition
US7629256B2 · kind B2 · utility
9Cited by
113References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 14, 2007 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Oct 29, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45525
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of processing semiconductor wafers is provided, comprising loading a batch of semiconductor wafers into a processing chamber; depositing titanium nitride (TiN) onto the wafers in the processing chamber; and depositing silicon onto the wafers in the processing chamber, without removing the wafers from the processing chamber between said depositing steps. In preferred embodiments, the TiN and silicon depositing steps are both conducted at temperatures within about 400-550° C., and at temperatures within 100° C. of one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.