Group III nitride-based compound semiconductor light-emitting device and method for producing the same
US7629619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2006 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Jun 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.