Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance

US7629628B2 · kind B2 · utility

Assignee

• austriamicrosystems AG

Inventors

• Jochen Kraft · Bruck an der Mur, AT
• Bernhard Loeffler · Gleisdorf, AT
• Georg Roehrer · Lebring, AT

Key dates

• Filing date: Dec 20, 2002
• Grant date: Dec 8, 2009
• Expiry date: Oct 5, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/177

Abstract

A transistor includes an emitter, a collector, and a base layer having a base contact. The base layer includes an intrinsic region between the emitter and the collector, an extrinsic region between the intrinsic region and the base contact, and a first doping layer that is doped with a trivalent substance, that extends into the extrinsic region, and that is counter-doped with a pentavalent substance in a region adjacent to the emitter.