Insulated-gate field effect transistor

US7629632B2 · kind B2 · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventor

• John Twynam · Regensburg, DE

Key dates

• Filing date: Oct 31, 2007
• Grant date: Dec 8, 2009
• Expiry date: Oct 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

In a heterostructure field effect transistor (MISHFET), a source ohmic electrode 105 and a drain ohmic electrode 106 are formed on an AlGaN barrier layer 104. A SiNx gate insulator 108, a p-type polycrystalline SiC layer 109, and a Pt/Au gate electrode 110 being an ohmic electrode are formed one on another on the AlGaN barrier layer 104. Since the p-type polycrystalline SiC layer 109 is relatively large in work function, the channel of the MISHFET is depleted even in its zero-bias state, so that the normally-OFF operation occurs.