Trench MOS structure
US7629647B2 · kind B2 · utility
1Cited by
11References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2004 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Dec 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
Abstract
A semiconductor device has a trench (42) adjacent to a cell (18). The cell includes source and drain contact regions (26, 28), and a central body (40) of opposite conductivity type. The device is bidirectional and controls current in either direction with a relatively low on-resistance. Preferred embodiments include potential plates (60) that act together with source and drain drift regions (30, 32) to create a RESURF effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.