Semiconductor devices with photoresponsive components and metal silicide light blocking structures
US7629661B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2006 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Jan 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the invention, a photonic device comprises a semiconductor substrate including at least one circuit component comprising a metal silicide layer and an overlying layer including at least one photoresponsive component. The metal silicide layer is disposed between the circuit component and the photoresponsive component to prevent entry into the circuit component of light that penetrates the photoresponsive component. The silicide layer advantageously reflects the light back into the photoresponsive element. In addition, the overlying layer can include one or more reflective layers to reduce entry of oblique light into the photoresponsive component. In an advantageous embodiment, the substrate comprises single-crystal silicon including one or more insulated gate field effect transistors (IGFETs), and/or capacitors, and the photoresponsive element comprises germanium and/or germanium alloy epitaxially grown from seeds on the silicon. The metal silicide layer can comprise the gate of the IGFET and/or an electrode of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.