Real-time gate etch critical dimension control by oxygen monitoring
US7632690B2 · kind B2 · utility
2Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 13, 2007 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Jan 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process and apparatus for controlling an etchant gas concentration in an etch chamber. The etchant gas concentration and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined reference value and the flow of etchant gas into the chamber is controlled in response thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.