Semiconductor device manufacturing method
US7632695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2007 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Nov 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle of not less than 0.1° nor more than 1.0° in a <1-100> direction, with respect to a (0001) plane. Then, a plurality of nitride semiconductor layers including an n-type semiconductor layer are stacked on the upper surface of the gallium nitride substrate to form a semiconductor device such as a semiconductor laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.