Introducing a metal layer between SiN and TiN to improve CBD contact resistance for P-TSV
US7633165B2 · kind B2 · utility
175Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2008 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Sep 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provide an integrated circuit. The integrated circuit includes a through-silicon-via (TSV) trench configured in a semiconductor substrate; a conductive pad formed on the semiconductor substrate, the conductive pad being adjacent the TSV trench; a silicon nitride layer disposed over the conductive pad and in the TSV trench; a titanium layer disposed on the silicon nitride layer; a titanium nitride layer disposed on the titanium layer; and a copper layer disposed on the titanium nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.