Method for determining temperature profile in semiconductor manufacturing test
US7633307B2 · kind B2 · utility
2Cited by
16References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2005 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Dec 16, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2874
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method is provided for testing semiconductor devices. In accordance with the method, a first usage temperature T1 is obtained which represents the maximum or minimum temperature to which a semiconductor device will be exposed during its first use by a customer. The semiconductor device is then tested for defects while ramping the temperature to which the device is exposed from a first temperature T0 to the temperature T1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.