Semiconductor integrated circuit device
US7633315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2006 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Dec 7, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/413
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a technique of reducing the leakage current of a drive circuit for driving a circuit that must retain a potential (or information) when in its standby state.A semiconductor integrated circuit device of the present invention includes a drive circuit for driving a circuit block. This drive circuit is made up of a double gate transistor with gates having different gate oxide film thicknesses. When the circuit block is in its standby state, the gate of the double gate transistor having a thinner gate oxide film is turned off and that having a thicker gate oxide film is turned on. This arrangement allows a reduction in the leakage currents of both the circuit block and the drive circuit while allowing the drive circuit to deliver or cut off power to the circuit block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.