Junction field effect dynamic random access memory cell and content addressable memory cell
US7633784B2 · kind B2 · utility
5Cited by
7References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 17, 2007 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Aug 7, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4068
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device including a dynamic random access memory (DRAM) cell and a ternary content addressable memory (TCAM) cell is disclosed. The DRAM cell may include a data storing portion and a data read portion. The data storing portion and data read portion comprising p-channel junction field effect transistors. The TCAM cell including an x-cell, y-cell, and comparator circuit. The x-cell, y-cell, and comparator circuits comprising p-channel JFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.