Storage element and memory
US7633796B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2008 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Jan 14, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A storage element includes a storage layer for holding information depending on a magnetization state of a magnetic material; and a magnetization fixed layer in which magnetization direction is fixed, that is arranged relative to the storage layer through a nonmagnetic layer. The magnetization direction of the storage layer is changed with application of an electric current in a laminating direction to enable information to be recorded to the storage layer. A plurality of magnetization regions respectively having magnetization components in laminating directions and having magnetizations in different directions from each other are formed in the magnetization fixed layer or on an opposite side of the magnetization fixed layer relative to the storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.