Reduced leakage driver circuit and memory device employing same
US7633830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2007 |
| Grant date | Dec 15, 2009 |
| Priority date | — |
| Expiry date | Feb 5, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A row line driver circuit for use in a memory array including multiple memory cells and multiple row lines coupled to the memory cells for selectively accessing the memory cells includes an output stage adapted for connection to a corresponding one of the row lines and a control circuit connected to the output stage. The output stage is operative during an active phase of a given memory cycle to drive the corresponding row line to a potential as a function of at least one address signal received by the driver circuit. The control circuit is operative to generate at least one control signal for disabling the output stage at least during an inactive phase of the memory cycle to thereby substantially eliminate a leakage current path in the driver circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.