Method for making red-light emitting diode having silicon quantum dots
US7635603B2 · kind B2 · utility
5Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2005 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Jan 21, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/95
Abstract
The present invention provides a method for making a light emitting diode (LED) through a silica film growth, an annealing treatment and a surface treatment so that the LED whose spectrum covers the whole red-light zone of a white-light spectrum is obtained with stability, economy, environmental protection and high efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.