Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer
US7635868B2 · kind B2 · utility
3Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2004 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Jul 9, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1° off from the {0001} surface of silicon carbide having an α-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.