Kazutoshi Kojima
9Patents
3h-index
29Co-inventors
53Inventor score
Filing activity: Aug 19, 2004 → Feb 20, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7265388B2 | Semiconductor device | Electricity | 21 | Expired |
| US8716718B2 | Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate | Electricity | 11 | Active |
| US7635868B2 | Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8293623B2 | Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate | Electricity | 1 | Active |
| US9053834B2 | Silicon carbide single crystal and manufacturing method of the same | Chemistry; Metallurgy | 0 | Active |
| US10354867B2 | Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device | Electricity | 0 | Active |
| US9587326B2 | Silicon carbide epitaxial wafer, method for manufacturing silicon carbide epitaxial wafer, device for manufacturing silicon carbide epitaxial wafer, and silicon carbide semiconductor element | Electricity | 0 | Active |
| US9496345B2 | Semiconductor structure, semiconductor device, and method for producing semiconductor structure | Electricity | 0 | Active |
| US10879359B2 | Silicon carbide epitaxial wafer having a thick silicon carbide layer with small wrapage and manufacturing method thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.