Semiconductor device with electric fuse having a flowing-out region
US7635907B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 7, 2007 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | May 7, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an electric fuse formed on a semiconductor substrate and composed of an electric conductor. The electric fuse includes an upper layer interconnect, a via coupled to the upper interconnect and a lower layer interconnect coupled to the via, which are formed in different layers, respectively, in a condition before cutting the electric fuse, and wherein the electric fuse includes a flowing-out region formed of the electric conductor being flowed toward outside from the second interconnect and a void region formed between the first interconnect and the via or in the via, in a condition after cutting the electric fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.