Semiconductor laser diode
US7636378B2 · kind B2 · utility
4Cited by
0References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 8, 2008 |
| Grant date | Dec 22, 2009 |
| Priority date | — |
| Expiry date | Feb 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.