Semiconductor device with increased channel area and fabrication method thereof
US7638398B2 · kind B2 · utility
7Cited by
5References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Sep 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.