Method for forming capacitor of semiconductor device
US7638407B2 · kind B2 · utility
3Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2008 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Nov 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
Forming a capacitor of a semiconductor device includes forming an interlayer dielectric having holes over a semiconductor substrate. A conductive layer is then formed on surfaces of the holes and on the upper surface of the interlayer dielectric. A silicon-containing conductive layer is formed by flowing a silicon source gas for the semiconductor substrate formed with the conductive layer, so that silicon atoms can penetrate into the conductive layer. The silicon-containing conductive layer prevents etchant from infiltrating the interlayer dielectric below the silicon-containing conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.