Method of fabricating semiconductor by nitrogen doping of silicon film
US7638413B2 · kind B2 · utility
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5References
15Claims
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Key dates
| Filing date | Apr 4, 2005 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Jul 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.