Local pressure sensing in a plasma processing system
US7638781B2 · kind B2 · utility
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Key dates
| Filing date | Oct 22, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Jun 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.