Crystalline composition, wafer, and semi-conductor structure
US7638815B2 · kind B2 · utility
4Cited by
16References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Aug 30, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.