Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods
US7638820B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2006 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Jan 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the, same conductivity type through an opening in a compound semiconductor material of the opposite conductivity type. Another embodiment discloses a transistor including multiple compound semiconductor layers where a highly doped compound semiconductor material is electrically connected to a compound semiconductor layer of the same conductivity type through an opening in a compound semiconductor layer of the opposite conductivity type. Embodiments further include metal contacts electrically connected to the highly doped compound semiconductor material. A substantially planar semiconductor device is disclosed. In embodiments, the compound semiconductor material may be silicon carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.