Embedded capacitor
US7638828B2 · kind B2 · utility
1Cited by
8References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 12, 2004 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Dec 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/813
Abstract
The invention concerns a capacitor whereof one first electrode consists of a highly doped active region (D) of a semiconductor component (T) formed on one side of a surface of a semiconductor body, and whereof the second electrode consists of a conductive region (BR) coated with insulation (IL) formed beneath said active region and embedded in the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.