Semiconductor device in peripheral circuit region using a dummy gate
US7638851B2 · kind B2 · utility
2Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Dec 31, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device in a peripheral circuit region includes a semiconductor substrate having a plurality of active areas which are disposed distantly from each other; a gate pattern including at least one gate disposed on the active area; a dummy gate disposed between the active areas and first and second pads; first and second pads connected to both sides of the gate and the dummy gate, respectively; and a first wiring formed so as to be in contact with at least one of the first and second pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.