Method for temperature compensation in MEMS resonators with isolated regions of distinct material
US7639104B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Aug 6, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49165
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material. In a specific embodiment, the shape, dimensions, location and arrangement of a second material comprising silicon dioxide is tailored so that the resonator comprising a first material of SiGe will have a TCF of a much lower magnitude than that of either a hom…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.