Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device
US7639522B2 · kind B2 · utility
28Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Sep 14, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Nov 21, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0078
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.