Semiconductor memory device for independently controlling internal supply voltages and method of using the same
US7639547B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2007 |
| Grant date | Dec 29, 2009 |
| Priority date | — |
| Expiry date | Jan 21, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor memory device and method that can control internal supply voltages independently. The semiconductor memory device includes a memory cell array, a reference voltage generating unit, an internal reference voltage generating unit, and an internal supply voltage generating unit. The reference voltage generating unit outputs a reference voltage in response to an external voltage. The internal reference voltage generating unit converts the reference voltage into a plurality of internal reference voltages, and outputs the plurality of internal reference voltages. The internal supply voltage generating unit converts the plurality of internal reference voltages into a plurality of internal supply voltages, and outputs the plurality of internal supply voltages. A first internal reference voltage is used to generate a first internal supply voltage and a second internal reference voltage is used to generate a second internal supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.