Doped aluminum nitride crystals and methods of making them
US7641735B2 · kind B2 · utility
23Cited by
50References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2006 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Jun 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.