Semiconductor device having a pillar structure
US7642650B2 · kind B2 · utility
4Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2004 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Feb 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first multilayer interconnection structure formed on a substrate and a second multilayer interconnection structure formed on the first multilayer interconnection structure, wherein the first multilayer interconnection structure includes a pillar extending from a surface of the substrate and reaching at least the second multilayer interconnection structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.