Semiconductor device, wiring of semiconductor device, and method of forming wiring
US7642653B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2007 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Apr 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, an element formed in the substrate, an insulation film formed on the substrate, wiring layers, and an electrode pad. The wiring layers are multilayered and electrically coupled to the element through the insulation film. The electrode pad is electrically coupled to a top wiring layer of the wiring layers. The top wiring layer is configured to be a top wiring-electrode layer that doubles as an electrode layer disposed under the electrode pad. The electrode layer of the top wiring-electrode layer is disposed directly above the element. The electrode pad and the electrode layer are multilayered to form a pad structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.