Methods and apparatus for electrostatic discharge protection in a semiconductor circuit
US7643258B2 · kind B2 · utility
7Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2006 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Jun 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
An ESD protection circuit is adapted for an integrated circuit with a first power source and a second power source. The ESD protection circuit comprises a first silicon controlled rectifier (SCR), and in some embodiments a second silicon controlled rectifier, and a parasitic diode. The silicon rectifiers as well as the parasitic diode can all be formed using a single well formed in a substrate. Further, the ESD protection circuit can be used in systems that have multiple power sources regardless of the difference in voltage between the power sources.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.