Method for self bonding epitaxy
US7645624B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Jul 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.