MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation
US7645657B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 10, 2007 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Feb 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS transistor is formed with a dual-layer silicon oxynitride (SiON) etch stop film that protects the transistor from plasma induced damage (PID) and hot carrier degradation, thereby improving the reliability of the transistors. The first SiON layer is formed with SiH4 at a first flow rate, and the second SiON layer is formed with SiH4 at a second higher flow rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.