Douglas Brisbin
12Patents
6h-index
11Co-inventors
55Inventor score
Filing activity: Aug 29, 2001 → Jun 9, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6566710B1 | Power MOSFET cell with a crossed bar shaped body contact area | Electricity | 37 | Expired |
| US7180140B1 | PMOS device with drain junction breakdown point located for reduced drain breakdown voltage walk-in and method for designing and manufacturing such device | Electricity | 27 | Expired |
| US6946706B1 | LDMOS transistor structure for improving hot carrier reliability | Electricity | 11 | Expired |
| US6727547B1 | Method and device for improving hot carrier reliability of an LDMOS transistor using drain ring over-drive bias | Electricity | 11 | Expired |
| US7214992B1 | Multi-source, multi-gate MOS transistor with a drain region that is wider than the source regions | Electricity | 7 | Expired |
| US6903979B1 | Efficient method of PMOS stacked-gate memory cell programming utilizing feedback control of substrate current | Physics | 7 | Expired |
| US6548839B1 | LDMOS transistor structure using a drain ring with a checkerboard pattern for improved hot carrier reliability | Electricity | 5 | Expired |
| US7718448B1 | Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays | Electricity | 4 | Active |
| US7645657B2 | MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation | Electricity | 1 | Active |
| US8471369B1 | Method and apparatus for reducing plasma process induced damage in integrated circuits | Electricity | 0 | Active |
| US8086979B2 | Method for designing and manufacturing a PMOS device with drain junction breakdown point located for reduced drain breakdown voltage walk-in | Electricity | 0 | Active |
| US7560348B2 | Method for designing and manufacturing a PMOS device with drain junction breakdown point located for reduced drain breakdown voltage walk-in | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.