Method of manufacturing silicon carbide semiconductor device
US7645658B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2007 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Jun 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a silicon carbide semiconductor device having a MOS structure includes preparing a substrate made of silicon carbide, and forming a channel region, a first impurity region, a second impurity region, a gate insulation layer, and a gate electrode to form a semiconductor element on the substrate. In addition, a film is formed on the semiconductor element to provide a material of an interlayer insulation layer, and a reflow process is performed at a temperature about 700° C. or over in an wet atmosphere so that the interlayer insulation layer is formed from the film. Furthermore, a dehydration process is performed at about 700° C. or lower in an inert gas atmosphere after the reflow process is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.