Method of producing non volatile memory device

US7645663B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Danny Pak-Chum Shum · Poughkeepsie, US
• Haoren Zhuang · Tokyo, JP
• John Power · Kilmacthomas, IE

Key dates

• Filing date: Jul 18, 2007
• Grant date: Jan 12, 2010
• Expiry date: Sep 12, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/681

Abstract

A method of forming a floating gate structure is disclosed, and includes modifying the etch chemistry of a plasma treated reactive ion etch process using an inert atom to physically damage a dielectric region. The damaged dielectric region is subsequently etched using a wet etch process.