Bonding method, device produced by this method, and bonding device
US7645681B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 2, 2004 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Oct 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67092
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Conventional heat bonding and anodic bonding require heating at high temperature and for a long time, leading to poor production efficiency and occurrence of a warp due to a difference in thermal expansion, resulting in a defective device. Such a problem is solved. An upper wafer 7 made of glass and a lower wafer 8 made of Si are surface-activated using an energy wave before performing anodic bonding, thereby performing bonding at low temperature and increasing a bonding strength. In addition, preliminary bonding due to surface activation is performed before main bonding due to anodic bonding is performed in a separate step or device, thereby increasing production efficiency, and enabling bonding of a three-layer structure without occurrence of a warp.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.