SiC-PN power diode

US7646026B2 · kind B2 · utility

Assignee

• Siced Electronics Development GmbH & Co. KG · DE

Inventors

• Peter Friedrichs · Koblenzer Straße, DE
• Dethard Peters · Edenkoben, DE
• Reinhold Schorner · Großenseebach, DE
• Dietrich Stephani · Bubenreuth, DE

Key dates

• Filing date: Sep 19, 2006
• Grant date: Jan 12, 2010
• Expiry date: Sep 19, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/60

Abstract

An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.