Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same
US7646041B2 · kind B2 · utility
48Cited by
3References
12Claims
0Family size
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Key dates
| Filing date | Dec 4, 2007 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Dec 4, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0416
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory device can include a semiconductor fin protruding from a semiconductor substrate of a first conductive type to extend in one direction, a first doped layer and a second doped layer provided to an upper portion and a lower portion of the semiconductor fin, respectively, to be vertically spaced apart from each other, the first and second doped layers having a second conductive type, and a plurality of word lines extending over a top and a sidewall of the semiconductor fin to intersect the direction. The word lines overlap the first doped layer and the second doped layer to have vertical channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.