High density integrated read-only memory (ROM) with reduced access time

US7646069B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Jean-Pierre Schoellkopf · Grenoble, FR
• Bertrand Borot · Chambéry, FR

Key dates

• Filing date: Jan 19, 2006
• Grant date: Jan 12, 2010
• Expiry date: Apr 25, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/903

Abstract

An integrated circuit memory of the read-only memory type includes at least one memory cell. Each memory cell includes a storage transistor realized in a semiconductor substrate and presenting a source connected to a reference potential, a gate connected to an electrically conductive word line, and a drain connected to an electrically conductive bit line by an optional connection depending on whether the memory cell is assigned the value 0 or 1. The storage transistor of each memory cell includes a gate formed on the substrate, in the form of a window whose inner contour delimits a central drain region in the substrate, and whose outer contour delimits at least one source region in the substrate.