Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory
US7646071B2 · kind B2 · utility
10Cited by
12References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2006 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Feb 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
Abstract
An improved dynamic memory cell using a semiconductor fin or body is described. Asymmetrical doping is used in the channel region, with more dopant under the back gate to improve retention without significantly increasing read voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.