Inventor · Beaverton, OR, US

Ibrahim Ban

33Patents
10h-index
24Co-inventors
71Inventor score

Filing activity: May 17, 2004 → Aug 24, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7498211B2 Independently controlled, double gate nanowire memory cell with self-aligned contacts Electricity 40 Active
US8217435B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 40 Active
US8569812B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 23 Active
US8980707B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 17 Active
US7560358B1 Method of preparing active silicon regions for CMOS or other devices Electricity 17 Active
US8731346B2 Waveguide integration on laser for alignment-tolerant assembly Electricity 13 Active
US9275999B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 11 Active
US9182544B2 Fabrication of planar light-wave circuits (PLCS) for optical I/O Physics 11 Active
US9418997B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 10 Active
US9520399B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 10 Active
US7646071B2 Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory Electricity 10 Active
US10121792B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 8 Active
US9646970B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 8 Active
US9786667B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 8 Active
US9664858B2 Optical photonic circuit coupling Physics 7 Active
US7944003B2 Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory Electricity 7 Active
US8390040B2 Localized spacer for a multi-gate transistor Electricity 7 Active
US10381350B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 3 Active
US7439588B2 Tri-gate integration with embedded floating body memory cell using a high-K dual metal gate Electricity 3 Active
US7859028B2 Independently controlled, double gate nanowire memory cell with self-aligned contacts Electricity 3 Active
US7112859B2 Stepped tip junction with spacer layer Emerging Cross-Sectional Technologies 3 Expired
US9618824B2 Integrated Terahertz sensor Physics 3 Active
US10720434B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 2 Active
US10916547B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 2 Active
US7666796B2 Substrate patterning for multi-gate transistors Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.