Ceramic coating member for semiconductor processing apparatus
US7648782B2 · kind B2 · utility
22Cited by
48References
16Claims
0Family size
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Key dates
| Filing date | Mar 20, 2007 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Mar 20, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment. A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIb of the Periodic Table coated directed or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.