Patent · US Active

Diagonal corner-to-corner sub-resolution assist features for photolithography

US7648803B2 · kind B2 · utility

8Cited by

1References

20Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Sam Sivakumar · Hillsboro, US
Charles H. Wallace · Portland, US
Shannon Daviess · Hillsboro, US

Key dates

Filing date	Mar 27, 2006
Grant date	Jan 19, 2010
Priority date	—
Expiry date	Oct 13, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/36
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Diagonal corner-to-corner sub-resolution assist features for use in photolithography are described. The diagonal features may be applied to one or a group of main features. Such features may be developed starting by synthesizing a photolithography mask having a first feature aligned along a linear axis and having a corner and a second feature aligned along a linear axis and having a corner, the corners of first and second features being separated from each other by a gap. The features may be developed by determining at least one diagonal line between the corners of the features to bridge the gap between the corners, applying a sub-resolution assist feature along the determined line, and modifying the synthesized photolithography mask to include the sub-resolution assist feature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.